• DocumentCode
    3670962
  • Title

    Influences on pulsed-current transporting properties of semiconductor switch by its consumed energy and thermal characters

  • Author

    K. Huang;Z. Dong;R. Ren;H. Zhang;W. Zhou

  • Author_Institution
    Northwest Institute of Mechanical and Electrical Engineering, XianYang, China
  • fYear
    2015
  • fDate
    5/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    The pulsed power supply provides single or repeated frequency pulse energy for the load and needs the high-power switches to realize the control function. For the advantages of high reliability and small resistance, the semiconductor switch has been widely used in the pulsed power systems. The through-flow capability is an important technical parameter of the semiconductor switch, and is also the basic parameter on designing the pulse power systems. Through theoretical analysis a fast algorithm for estimating the semiconductor switch through-flow capability was deduced by applying the 10ms surge index of the device in this paper. To prove the feasibility of the method, a thyristor in an electromagnetism launching system was tested with this algorithm, and its flow-through capacity is compared with the results from forester´s model. Results show that this method provided a fast and concise model.
  • Keywords
    "Switches","Junctions","Thyristors","Resistance","Mathematical model","Temperature measurement","Semiconductor device modeling"
  • Publisher
    ieee
  • Conference_Titel
    Pulsed Power Conference (PPC), 2015 IEEE
  • ISSN
    2158-4915
  • Electronic_ISBN
    2158-4923
  • Type

    conf

  • DOI
    10.1109/PPC.2015.7296858
  • Filename
    7296858