Fast and accurate electro-thermal behavioral model of a commercial SiC 1200V, 80 mΩ power MOSFET

The superior electro-thermal properties of Silicon Carbide (SiC) as compared to silicon make them a viable candidate for high voltage and high frequency applications. Due to the relatively recent surge in commercially available SiC power MOSFETs, there is an immediate demand for accurate simulations models to predict device behavior and aid circuit design process. This paper discusses the development of an accurate SPICE based model for a commercially available 1200V, 20A SiC power MOSFET manufactured by CREE Inc. based on the Enz - Krummenacher - Vittoz (EKV) MOSFET model. The advantage of using EKV model over the simplified quadratic model is the ability to characterize MOSFET behavior over weak, moderate and strong inversion regions with a single equation. The model was developed using parameters extracted through experimental data conducted at wide temperature range. Package parasitic components have been incorporated into the model to predict device behavior in high frequency switching applications. The model was simulated for its static and transient behavior and compared with actual device results to determine accuracy over a wide operating range.