• DocumentCode
    3671964
  • Title

    On the origin of low-frequency noise of submicron Graded-Channel fully depleted SOI nMOSFETs

  • Author

    A. R. Molto;R. T. Doria;M. de Souza;M. A. Pavanello

  • Author_Institution
    Department of Electrical Engineering, Centro Universitá
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper deals with the Low-Frequency Noise (LFN) behavior of submicron Graded-Channel SOI nMOSFETs, fabricated in a 150 nm Technology from Oki Semiconductors as a continuation from previous works, looking at the noise sources of these devices. The effects of channel length reduction and gate bias dependence on the LFN of devices biased in linear regime are investigated. The effective trap density and the KF constant, which can be used in BSIM SPICE-like models, are determined.
  • Keywords
    "Semiconductor device measurement","Radiative recombination","Metals","Logic gates","Low-frequency noise","MOSFET"
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics Technology and Devices (SBMicro), 2015 30th Symposium on
  • Type

    conf

  • DOI
    10.1109/SBMicro.2015.7298113
  • Filename
    7298113
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3671964