Title :
Comparative analysis of 350nm CMOS Active Pixel Sensor electronics
Author :
Lidiane C. Costa;Artur S. B. de Mello;Luciana P. Salles;Davies W. de Lima Monteiro
Author_Institution :
OptMAlab - Graduate Program in Electrical Engineering - Universidade Federal de Minas Gerais - Av. Antô
Abstract :
This paper presents experimental and simulated results of the Active Pixel Sensor (APS) circuit operating in 6 different cell designs. The optical sensor used was a silicon photodiode integrated with its electronics in a standard 350nm CMOS technology. Comparison between the types of circuits was made to determine the operational characteristics for different irradiance values. The results are important to guide choices for different applications.
Keywords :
"CMOS integrated circuits","Semiconductor device modeling","Logic gates","Computational modeling","Integrated optics","Optical saturation","Optical sensors"
Conference_Titel :
Microelectronics Technology and Devices (SBMicro), 2015 30th Symposium on
DOI :
10.1109/SBMicro.2015.7298138
