• DocumentCode
    3671989
  • Title

    Comparative analysis of 350nm CMOS Active Pixel Sensor electronics

  • Author

    Lidiane C. Costa;Artur S. B. de Mello;Luciana P. Salles;Davies W. de Lima Monteiro

  • Author_Institution
    OptMAlab - Graduate Program in Electrical Engineering - Universidade Federal de Minas Gerais - Av. Antô
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper presents experimental and simulated results of the Active Pixel Sensor (APS) circuit operating in 6 different cell designs. The optical sensor used was a silicon photodiode integrated with its electronics in a standard 350nm CMOS technology. Comparison between the types of circuits was made to determine the operational characteristics for different irradiance values. The results are important to guide choices for different applications.
  • Keywords
    "CMOS integrated circuits","Semiconductor device modeling","Logic gates","Computational modeling","Integrated optics","Optical saturation","Optical sensors"
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics Technology and Devices (SBMicro), 2015 30th Symposium on
  • Type

    conf

  • DOI
    10.1109/SBMicro.2015.7298138
  • Filename
    7298138
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3671989