DocumentCode :
3673038
Title :
Compensation circuit with additional junction sensor to enhance latchup immunity for CMOS integrated circuits
Author :
Hui-Wen Tsai;Ming-Dou Ker
Author_Institution :
Institute of Electronics, National Chiao-Tung University, Hsinchu, Taiwan
fYear :
2015
Firstpage :
1
Lastpage :
4
Abstract :
A circuit solution to generate compensation current that can decrease the perturbation induced by the external latchup trigger was proposed. The robustness against latchup can be improved by supporting compensation current at the pad under latch-up current test. By inserting additional junctions to sense the latchup trigger current, the injected latchup trigger current can be detected, and then the I/O or ESD-protection devices are used to generate the compensation current that decrease the perturbation to the internal circuits. The proposed design has been successfully verified in a 0.5-μm BCD process to improve latchup immunity.
Keywords :
"Layout","Electrostatic discharges","Junctions","CMOS integrated circuits","Standards","Robustness"
Publisher :
ieee
Conference_Titel :
Circuit Theory and Design (ECCTD), 2015 European Conference on
Type :
conf
DOI :
10.1109/ECCTD.2015.7300129
Filename :
7300129
Link To Document :
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