• DocumentCode
    36739
  • Title

    A New Gas Sensor Based on MOSFET Having a Horizontal Floating-Gate

  • Author

    Chang-Hee Kim ; In-Tak Cho ; Jong-Min Shin ; Kyu-Bong Choi ; Jung-Kyu Lee ; Jong-Ho Lee

  • Author_Institution
    Inter-Univ. Semicond. Res. Center, Seoul Nat. Univ., Seoul, South Korea
  • Volume
    35
  • Issue
    2
  • fYear
    2014
  • fDate
    Feb. 2014
  • Firstpage
    265
  • Lastpage
    267
  • Abstract
    A new gas sensor based on metal-oxide- semiconductor field-effect transistor was fabricated and characterized. The sensor has p-type channel, floating-gate, and control-gate formed horizontally so that various kinds of sensing material can be used in this basic sensing structure. As a sensing material in this letter, SnOx was adopted to sense a target gas of NO2. Measured drain current was changed by 195% at a NO2 gas concentration of 50 ppm. Sensing speed is <;50 s at 180 °C.
  • Keywords
    MOSFET; gas sensors; tin compounds; MOSFET; SnO; control gate; drain current; gas concentration; gas sensor; horizontal floating gate; p type channel; sensing material; temperature 180 degC; Gas detectors; Logic gates; MOSFET; Silicon; Gas sensor; MOSFET; floating-gate; horizontal control-gate; sensing layer; work-function;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2013.2294722
  • Filename
    6691916
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=36739