DocumentCode :
3674189
Title :
Resistivity anisotropy and surface morphology in ordered In/sub x/Ga/sub 1-x/P grown at 640/spl deg/C
Author :
J. Novak;S. Hasen;V. Cambel;R. Kudela;M. Kucera
Author_Institution :
Inst. of Electr. Eng., Slovak Acad. of Sci., Bratislava, Slovakia
fYear :
1998
Firstpage :
23
Lastpage :
26
Abstract :
We have studied the resistivity anisotropy of ordered In/sub x/Ga/sub 1-x/P epitaxial layers grown at 640/spl deg/C. Increasing the lattice mismatch leads to an increase in the resistivity anisotropy, which is higher than two orders of magnitude. We suppose that this effect is caused by additional scattering at the boundaries of ordered domains.
Keywords :
"Conductivity","Anisotropic magnetoresistance","Surface morphology","Epitaxial layers","Lattices","Temperature","Optical scattering","Surface reconstruction","Gallium arsenide","Semiconductor materials"
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 1998. ASDAM ´98. Second International Conference on
Print_ISBN :
0-7803-4909-1
Type :
conf
DOI :
10.1109/ASDAM.1998.730157
Filename :
730157
Link To Document :
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