Title :
GaInAs/GaAs strained QWs prepared by LP MOVPE on misoriented substrates
Author :
E. Hulicius;A. Hospodkova;J. Oswald;J. Pangrac;K. Melichar;T. Simecek
Author_Institution :
Inst. of Phys., Czechoslovak Acad. of Sci., Prague, Czech Republic
Abstract :
Luminescence properties of strained Ga/sub 1-x/ln/sub x/As/GaAs multiple quantum wells of different thickness and In content, prepared by metal organic vapour phase epitaxy were studied. The influence of composition and substrate orientation on the shape of luminescence spectra was investigated. The experimental results were fitted by model-solid theory and with adjusted Q parameter.
Keywords :
"Gallium arsenide","Epitaxial growth","Epitaxial layers","Substrates","Quantum well devices","Temperature","Luminescence","Shape","Semiconductor process modeling","Photoluminescence"
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 1998. ASDAM ´98. Second International Conference on
Print_ISBN :
0-7803-4909-1
DOI :
10.1109/ASDAM.1998.730188
