Title :
Dissipative transport in monolayer MoS2: role of remote coulomb scattering
Author :
K. Khair;S. Ahmed
Author_Institution :
Department of Electrical and Computer Engineering, Southern Illinois University at Carbondale, 1230 Lincoln Drive, Carbondale, IL 62901, USA
Abstract :
In this work, we calculate the scattering rates in monolayer MoS2 due to various a) intrinsic phonon, b) remote phonon, and c) remote Coulomb processes. We then study the electron transport in a monolayer MoS2 based FET device employing a particle based Monte Carlo device simulator. Our results show that the total scattering rate is strongly dominated by remote coulomb scattering, which, when compared to the ballistic regime, degrades the drain current by ~78%.
Keywords :
"Phonons","Field effect transistors","Monte Carlo methods","Optical scattering","Logic gates","Adaptive optics"
Conference_Titel :
Computational Electronics (IWCE), 2015 International Workshop on
DOI :
10.1109/IWCE.2015.7301937
