• DocumentCode
    3674576
  • Title

    Diffusion-reaction modeling of Cu migration in CdTe solar devices

  • Author

    D. Guo;D. Brinkman;T. Fang;R. Akis;I. Sankin;D. Vasileska;C. Ringhofer

  • Author_Institution
    School of ECEE, Arizona State University, Tempe, AZ, USA
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this work, we report on development of one-dimensional (1D) finite-difference and two-dimensional (2D) finite-element diffusion-reaction simulators to investigate mechanisms behind Cu-related metastabilities observed in CdTe solar cells [1]. The evolution of CdTe solar cells performance has been studied as a function of stress time in response to the evolution of associated acceptor and donor states. To achieve such capability, the simulators solve reaction-diffusion equations for the defect states in time-space domain self-consistently with the free carrier transport. Results of 1-D and 2-D simulations have been compared to verify the accuracy of solutions.
  • Keywords
    "II-VI semiconductor materials","Cadmium compounds","Photovoltaic cells","Stress","Mathematical model","Finite element analysis","Finite difference methods"
  • Publisher
    ieee
  • Conference_Titel
    Computational Electronics (IWCE), 2015 International Workshop on
  • Type

    conf

  • DOI
    10.1109/IWCE.2015.7301962
  • Filename
    7301962