DocumentCode :
3674576
Title :
Diffusion-reaction modeling of Cu migration in CdTe solar devices
Author :
D. Guo;D. Brinkman;T. Fang;R. Akis;I. Sankin;D. Vasileska;C. Ringhofer
Author_Institution :
School of ECEE, Arizona State University, Tempe, AZ, USA
fYear :
2015
Firstpage :
1
Lastpage :
2
Abstract :
In this work, we report on development of one-dimensional (1D) finite-difference and two-dimensional (2D) finite-element diffusion-reaction simulators to investigate mechanisms behind Cu-related metastabilities observed in CdTe solar cells [1]. The evolution of CdTe solar cells performance has been studied as a function of stress time in response to the evolution of associated acceptor and donor states. To achieve such capability, the simulators solve reaction-diffusion equations for the defect states in time-space domain self-consistently with the free carrier transport. Results of 1-D and 2-D simulations have been compared to verify the accuracy of solutions.
Keywords :
"II-VI semiconductor materials","Cadmium compounds","Photovoltaic cells","Stress","Mathematical model","Finite element analysis","Finite difference methods"
Publisher :
ieee
Conference_Titel :
Computational Electronics (IWCE), 2015 International Workshop on
Type :
conf
DOI :
10.1109/IWCE.2015.7301962
Filename :
7301962
Link To Document :
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