Impact of discrete dopants in ultra-scale finfets and the effect of XC on dopant clustering

Non-equilibrium Green´s Function simulations of an ultra-scale FinFET in the ballistic regime have been carried at low/high drain bias. We have calculated variability due to random dopants located in the source/drain regions of the transistor. The channel length of the scaled transistor is under 10 nm and therefore substantial tunnelling is expected. We have calculated the tunnelling as a function of the gate bias in two dopant configurations with the lowest and highest drain current. We have also computed the threshold voltage, sub-threshold slope and off current variability. We have studied the effect of the exchange correlation on the simulation of a cluster of dopants in the channel of the transistor.