DocumentCode :
3674605
Title :
Macrostress formation in thin films and its investigation by X-ray diffraction
Author :
P. Sutta;Q. Jackuliak
Author_Institution :
Dept. of Phys., Mil. Acad., Mikulas, Slovakia
fYear :
1998
Firstpage :
227
Lastpage :
230
Abstract :
Elastic stresses and strains are almost always present in thin films deposited on substrates. In the majority of cases these stresses are residual stresses, introduced into the system during deposition or subsequent processing and they me mostly biaxial at the thin film substrate interface. Two significant reasons of macrostress formation in thin films can be distinguished thermal and/or epitaxial mismatch between the thin film and substrate thermal coefficients and lattice parameters.
Keywords :
"Transistors","X-ray diffraction","Powders","Goniometers","Ceramics","NIST","Instruments","Palladium","Semiconductor thin films"
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 1998. ASDAM ´98. Second International Conference on
Print_ISBN :
0-7803-4909-1
Type :
conf
DOI :
10.1109/ASDAM.1998.730205
Filename :
730205
Link To Document :
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