DocumentCode
3677261
Title
The GeSn laser — Enabler for monolithic integration of photonics on Si
Author
Slephan Wirths;Richard Geiger;Zoran Ikonie;C. Schulie-Braucks;D. Stange;N. von den Driesch;Jean-Michel Hartmann;Siegfried Mantl;Hans Sigg;Dan Buca;Detlev Grützmacher
Author_Institution
Peter Grü
fYear
2015
Firstpage
165
Lastpage
166
Abstract
Reactive Gas Source Epitaxy has been employed to deposit SiGeSn/GeSn alloys on virtual Ge/Si (100) substrates. Optically pumped Fabry-Perol and a-disc lasers have been fabricated emitting from 2.0-2.6 μm in dependence of the Sn concentration.
Keywords
"Tin","Cavity resonators","Optical waveguides","Optical pumping","Silicon","Photonics"
Publisher
ieee
Conference_Titel
Group IV Photonics (GFP), 2015 IEEE 12th International Conference on
Type
conf
DOI
10.1109/Group4.2015.7305915
Filename
7305915
Link To Document