• DocumentCode
    3677264
  • Title

    Excess carrier lifetime in epitaxially grown layers of germanium on silicon

  • Author

    Satoshi Kako;Katsuya Oda;Tetemi Ido;Yasuhiko Arakawa

  • Author_Institution
    Institute of Industrial Science, die University of Tokyo, 4-6-1, Komaha, Meguro, Tokyo, 153-8505 Japan
  • fYear
    2015
  • Firstpage
    171
  • Lastpage
    172
  • Abstract
    We investigate the layer thickness dependence of the excess carrier lifetime of germanium on silicon by means of time-resolved photoluminescence. We find that a bulk lifetime > 90 ns is achievable for the undoped germanium.
  • Keywords
    "Charge carrier lifetime","Silicon","Germanium","Radiative recombination","Fitting","Surface fitting","Epitaxial growth"
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2015 IEEE 12th International Conference on
  • Type

    conf

  • DOI
    10.1109/Group4.2015.7305918
  • Filename
    7305918
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3677264