Title :
Fabrication of high bit rate, monolith ically integrated receivers in photonic BiCMOS technology
Author :
D. Knoll;S- Lischke;L. Zimmermann;A. Awny;M. Kroh; Peczek;K. Voigt;K. Petermann
Author_Institution :
IHP. Im Technologiepark 25, 15236 Frankfurt (Oder). Germany
Abstract :
We present results of photonic BiCMOS process development enabling the fabrication of monolithically integrated receivers for 40Gbps and beyond. Focus is on the challenge to fabricate simultaneously 200GHz SiGe HBTs and Ge photodiodes with enough bandwidth.
Keywords :
"Photonics","BiCMOS integrated circuits","Receivers","Photodiodes","Heterojunction bipolar transistors","Annealing","Silicon germanium"
Conference_Titel :
Group IV Photonics (GFP), 2015 IEEE 12th International Conference on
DOI :
10.1109/Group4.2015.7305923
