DocumentCode :
3677297
Title :
Impact of GeOx passivation on Dark Current for wafer-bonded Ge-on-insulator metal-semiconductor-metal photodetector
Author :
Jian Kang;Mitsuru Takenaka;Shinichi Takagi
Author_Institution :
The University of Tokyo, 7-3-1 Hongo. Bunkyo-ku, Tokyo 113-8656. Japan
fYear :
2015
Firstpage :
73
Lastpage :
74
Abstract :
Effect of GeO4 passivation on Ge-on-insulator MSM photod erectors (PDs) formed by wafer bonding is investigated. We found GeOx passivation of both top and bottom Ge interfaces is important for dark current suppression in MSM PDs.
Keywords :
"Passivation","Annealing","Dark current","Substrates","Wafer bonding"
Publisher :
ieee
Conference_Titel :
Group IV Photonics (GFP), 2015 IEEE 12th International Conference on
Type :
conf
DOI :
10.1109/Group4.2015.7305952
Filename :
7305952
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3677297
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