• DocumentCode
    3677297
  • Title

    Impact of GeOx passivation on Dark Current for wafer-bonded Ge-on-insulator metal-semiconductor-metal photodetector

  • Author

    Jian Kang;Mitsuru Takenaka;Shinichi Takagi

  • Author_Institution
    The University of Tokyo, 7-3-1 Hongo. Bunkyo-ku, Tokyo 113-8656. Japan
  • fYear
    2015
  • Firstpage
    73
  • Lastpage
    74
  • Abstract
    Effect of GeO4 passivation on Ge-on-insulator MSM photod erectors (PDs) formed by wafer bonding is investigated. We found GeOx passivation of both top and bottom Ge interfaces is important for dark current suppression in MSM PDs.
  • Keywords
    "Passivation","Annealing","Dark current","Substrates","Wafer bonding"
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2015 IEEE 12th International Conference on
  • Type

    conf

  • DOI
    10.1109/Group4.2015.7305952
  • Filename
    7305952
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3677297