Title :
Low-voltage Si-Ge avalanche photodiode
Author :
Zhihong Huang;Di Liang;Charles Santori;Marco Fiorentino;Cheng Li;Raymond G. Beausoleil
Author_Institution :
System Labs, Hewlett Packard Laboratories Palo Alto, California 94304
Abstract :
Here we report a Si-Ge avalanche photodiode (APD) with a breakdown voltage of only -9.8V. The highest measured bandwidth is 12GHz at gain of 15 giving a 180GHz gain-bandwidth product at 1550nm wavelength.
Keywords :
"Bandwidth","Silicon","Germanium","Avalanche photodiodes","Sensitivity","Boron","Photonics"
Conference_Titel :
Group IV Photonics (GFP), 2015 IEEE 12th International Conference on
DOI :
10.1109/Group4.2015.7305954
