• DocumentCode
    3677327
  • Title

    Graded Ge1−xSnx photodetectors fabricated on Si substrates by rapid melt growth method

  • Author

    Chih-Kuo Tseng;Jia-Jiun Gao;Li-Chuan Weng;Neil Na;Erh-Hao Chen;Ming-Chang M. Lee

  • Author_Institution
    Institute of Photonics Technologies, National Tsing Hua University, Hsinchu, Taiwan, ROC
  • fYear
    2015
  • Firstpage
    125
  • Lastpage
    126
  • Abstract
    Near-infrared absorption at 2000-nm wavelength is observed in a Ge1-xSnx metal-semiconductor-metal (MSM) photodetector on a Si substrate. The device is fabricated by rapid melt growth method with graded Sn concentration up to 5-10%.
  • Keywords
    "Tin","Silicon","Photodetectors","Strips","Substrates","Absorption"
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2015 IEEE 12th International Conference on
  • Type

    conf

  • DOI
    10.1109/Group4.2015.7305982
  • Filename
    7305982
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3677327