DocumentCode :
3677327
Title :
Graded Ge1−xSnx photodetectors fabricated on Si substrates by rapid melt growth method
Author :
Chih-Kuo Tseng;Jia-Jiun Gao;Li-Chuan Weng;Neil Na;Erh-Hao Chen;Ming-Chang M. Lee
Author_Institution :
Institute of Photonics Technologies, National Tsing Hua University, Hsinchu, Taiwan, ROC
fYear :
2015
Firstpage :
125
Lastpage :
126
Abstract :
Near-infrared absorption at 2000-nm wavelength is observed in a Ge1-xSnx metal-semiconductor-metal (MSM) photodetector on a Si substrate. The device is fabricated by rapid melt growth method with graded Sn concentration up to 5-10%.
Keywords :
"Tin","Silicon","Photodetectors","Strips","Substrates","Absorption"
Publisher :
ieee
Conference_Titel :
Group IV Photonics (GFP), 2015 IEEE 12th International Conference on
Type :
conf
DOI :
10.1109/Group4.2015.7305982
Filename :
7305982
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3677327
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