• DocumentCode
    3678117
  • Title

    Single Electron Transistors (SET) substituting MOSFETs to reduce power consumption of an inverter circuit

  • Author

    Ahmed Shariful Alam;Abu Hena Md. Mustafa Kamal;Md. Abdur Rahman;Md. Nasmus Sakib Khan Shabbir;Atiqul Islam

  • Author_Institution
    Dept. of EEE, IUT, Gazipur, Bangladesh
  • fYear
    2015
  • fDate
    5/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    Instead of MOSFET Single Electron Transistor (SET) can be used as a voltage controlled switch. The current flowing through a SET is the result of electron tunneling through tunnel junctions of its source and drain. So the supply voltage requirement is also very low. As a result, the power consumption across a Single Electron Transistor is ultra-low in comparison to that of a MOSFET. In this research work simulations have been done with PSPICE for an inverter built with both SETs and MOSFETs. Supply voltage requirement for a SET based inverter was 35mV whereas the supply voltage requirement for a CMOS inverter was 3.5V. SET based inverter consumes almost 5 million times less power than CMOS inverter.
  • Keywords
    "Inverters","CMOS integrated circuits","Logic gates","MOSFET","Manganese"
  • Publisher
    ieee
  • Conference_Titel
    Electrical Engineering and Information Communication Technology (ICEEICT), 2015 International Conference on
  • Type

    conf

  • DOI
    10.1109/ICEEICT.2015.7307337
  • Filename
    7307337