DocumentCode
3678117
Title
Single Electron Transistors (SET) substituting MOSFETs to reduce power consumption of an inverter circuit
Author
Ahmed Shariful Alam;Abu Hena Md. Mustafa Kamal;Md. Abdur Rahman;Md. Nasmus Sakib Khan Shabbir;Atiqul Islam
Author_Institution
Dept. of EEE, IUT, Gazipur, Bangladesh
fYear
2015
fDate
5/1/2015 12:00:00 AM
Firstpage
1
Lastpage
6
Abstract
Instead of MOSFET Single Electron Transistor (SET) can be used as a voltage controlled switch. The current flowing through a SET is the result of electron tunneling through tunnel junctions of its source and drain. So the supply voltage requirement is also very low. As a result, the power consumption across a Single Electron Transistor is ultra-low in comparison to that of a MOSFET. In this research work simulations have been done with PSPICE for an inverter built with both SETs and MOSFETs. Supply voltage requirement for a SET based inverter was 35mV whereas the supply voltage requirement for a CMOS inverter was 3.5V. SET based inverter consumes almost 5 million times less power than CMOS inverter.
Keywords
"Inverters","CMOS integrated circuits","Logic gates","MOSFET","Manganese"
Publisher
ieee
Conference_Titel
Electrical Engineering and Information Communication Technology (ICEEICT), 2015 International Conference on
Type
conf
DOI
10.1109/ICEEICT.2015.7307337
Filename
7307337
Link To Document