DocumentCode :
3678117
Title :
Single Electron Transistors (SET) substituting MOSFETs to reduce power consumption of an inverter circuit
Author :
Ahmed Shariful Alam;Abu Hena Md. Mustafa Kamal;Md. Abdur Rahman;Md. Nasmus Sakib Khan Shabbir;Atiqul Islam
Author_Institution :
Dept. of EEE, IUT, Gazipur, Bangladesh
fYear :
2015
fDate :
5/1/2015 12:00:00 AM
Firstpage :
1
Lastpage :
6
Abstract :
Instead of MOSFET Single Electron Transistor (SET) can be used as a voltage controlled switch. The current flowing through a SET is the result of electron tunneling through tunnel junctions of its source and drain. So the supply voltage requirement is also very low. As a result, the power consumption across a Single Electron Transistor is ultra-low in comparison to that of a MOSFET. In this research work simulations have been done with PSPICE for an inverter built with both SETs and MOSFETs. Supply voltage requirement for a SET based inverter was 35mV whereas the supply voltage requirement for a CMOS inverter was 3.5V. SET based inverter consumes almost 5 million times less power than CMOS inverter.
Keywords :
"Inverters","CMOS integrated circuits","Logic gates","MOSFET","Manganese"
Publisher :
ieee
Conference_Titel :
Electrical Engineering and Information Communication Technology (ICEEICT), 2015 International Conference on
Type :
conf
DOI :
10.1109/ICEEICT.2015.7307337
Filename :
7307337
Link To Document :
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