DocumentCode :
3678682
Title :
A highly efficient 2kW 3-level full-MOSFET inverter
Author :
Lefevre Guillaume;Degrenne Nicolas;Mollov Stefan
Author_Institution :
Mitsubishi Electric R&
fYear :
2015
Firstpage :
1
Lastpage :
10
Abstract :
This paper investigates an improved 3-level flying capacitor inverter topology allowing a drastic reduction of reverse recovery related losses. It benefits from the latest superjunction (SJ) MOSFET devices. The presented 2kW inverter was designed for Japanese PV market (200Vrms). It allows non unitary power factor operations with peak and European efficiency of 98.0% and 97.6% respectively. Thanks to SJ MOSFET implementation, it outperforms state-of-art configuration using IGBTs and SiC diodes in terms of efficiency.
Keywords :
"Capacitors","Snubbers","Switches","MOSFET","Topology","Semiconductor diodes","Insulated gate bipolar transistors"
Publisher :
ieee
Conference_Titel :
Power Electronics and Applications (EPE´15 ECCE-Europe), 2015 17th European Conference on
Type :
conf
DOI :
10.1109/EPE.2015.7309058
Filename :
7309058
Link To Document :
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