Application of proton irradiation with energy over 10 MeV for reverse recovery characteristics control of high voltage freewheeling diodes

The following aspects of using irradiation with accelerated protons, which have initial energy over 10 MeV, for production of high voltage freewheeling diodes are being described: generation of uneven lifetime distribution inside the semiconductor element; implementation of the hidden, induced with implanted hydrogen n´-layers into the semiconductor element. It is shown that there is a possibility to produce freewheeling diodes for 4500 V voltage, which can safely operate in snubberless mode during reverse recovery with DC link reverse voltage over 3000 V and current drop rate over 5000 A/us. Bipolar device, Diode, Discrete power device, Fast recovery diode, Free Wheel Diode (FWD), High power discrete device, Power semiconductor device, Reverse recovery, Semiconductor device.