• DocumentCode
    3678760
  • Title

    New 1200V full SiC module with 800A rated current

  • Author

    Eugen Wiesner;Koichi Masuda;Motonobu Joko

  • Author_Institution
    MITSUBISHI ELECTRIC EUROPE B.V., Gothaer Str. 8, 40880 Ratingen, Germany
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    9
  • Abstract
    This paper is dealing with a newly developed high current 800A/1200V full SiC module containing SiC MOSFETs and antiparallel SiC Schottky Barrier Diodes in a half bridge configuration. Electrical characteristics and thermal performance are described and compared with Si-based IGBT modules. The dependencies of switching characteristics from specific operation conditions are investigated. The paper concludes with a recommendation of application conditions to benefit most from such a high current full SiC module.
  • Keywords
    "Silicon carbide","Switches","Silicon","Inverters","MOSFET","Color","Insulated gate bipolar transistors"
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics and Applications (EPE´15 ECCE-Europe), 2015 17th European Conference on
  • Type

    conf

  • DOI
    10.1109/EPE.2015.7309137
  • Filename
    7309137
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3678760