Title :
New 1200V full SiC module with 800A rated current
Author :
Eugen Wiesner;Koichi Masuda;Motonobu Joko
Author_Institution :
MITSUBISHI ELECTRIC EUROPE B.V., Gothaer Str. 8, 40880 Ratingen, Germany
Abstract :
This paper is dealing with a newly developed high current 800A/1200V full SiC module containing SiC MOSFETs and antiparallel SiC Schottky Barrier Diodes in a half bridge configuration. Electrical characteristics and thermal performance are described and compared with Si-based IGBT modules. The dependencies of switching characteristics from specific operation conditions are investigated. The paper concludes with a recommendation of application conditions to benefit most from such a high current full SiC module.
Keywords :
"Silicon carbide","Switches","Silicon","Inverters","MOSFET","Color","Insulated gate bipolar transistors"
Conference_Titel :
Power Electronics and Applications (EPE´15 ECCE-Europe), 2015 17th European Conference on
DOI :
10.1109/EPE.2015.7309137
