Electro-thermal model of an integrated buck converter

This study deals with new integrated systems for power electronic applications including wide-band gap semiconductors. The integration of Silicon carbide (SiC) components provides new perspectives such as higher temperature operating points than conventional Silicon (Si) semiconductors. The present work intends to study the electro-thermal behaviour of an integrated buck converter composed of a Silicon IGBT (Insulated-Gate Bipolar Transistor) and a Silicon carbide diode. An analysis of local heat sources due to Joule effect and compact thermal model of the assembly are proposed to predict local temperature of power electronic components.