DocumentCode :
3678811
Title :
Operation of single-chip MOSFET and IGBT devices after failure due to repetitive avalanche: University in collaboration with industry
Author :
Andrei Blinov;Staffan Norrga;Gabriel Tibola
Author_Institution :
KTH Royal Institute of Technology, Teknikringen 33, Stockholm, Sweden
fYear :
2015
Firstpage :
1
Lastpage :
9
Abstract :
This paper presents analysis of post-failure behaviour of MOSFETs and IGBTs operating in a series connected string. The aim of this experimental study is to analyse the operation of devices in case of sudden loss of controllability, leading to repetitive avalanche conditions at relatively low current and subsequent failure due to overheat. For redundant designs it is important that the devices are locked in stable conducting state after the failure and the string continue its operation.
Keywords :
"MOSFET","Insulated gate bipolar transistors","Logic gates","Switches","Silicon carbide","Reliability","Junctions"
Publisher :
ieee
Conference_Titel :
Power Electronics and Applications (EPE´15 ECCE-Europe), 2015 17th European Conference on
Type :
conf
DOI :
10.1109/EPE.2015.7309190
Filename :
7309190
Link To Document :
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