• DocumentCode
    3678827
  • Title

    Behavioral model of gallium nitride normally ON power HEMT dedicated to inverter simulation and test of driving strategies

  • Author

    Timothé Rossignol;Frédéric Richardeau;Marc Cousineau;Jean-Marc Blaquière;René Escoffier

  • Author_Institution
    Univeristy of Toulouse, LAPLACE, INP-ENSEEIHT, 2 rue Charles Camichel, BP 7122, 31071 cedex 7, France
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    11
  • Abstract
    In this paper, the authors present a behavioral model of a GaN normally ON HEMT. Forward and reverse conductions are modelized. The modelling of both conduction modes is required to provide accurate diode-less synchronous switching-cell simulation. A dedicated transistor capacitance extraction procedure based on an analysis of turn-on and turn-off waveforms is also proposed and experimented.
  • Keywords
    "HEMTs","Gallium nitride","Mathematical model","Logic gates","Transconductance","Parameter extraction"
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics and Applications (EPE´15 ECCE-Europe), 2015 17th European Conference on
  • Type

    conf

  • DOI
    10.1109/EPE.2015.7309208
  • Filename
    7309208
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3678827