Title :
Behavioral model of gallium nitride normally ON power HEMT dedicated to inverter simulation and test of driving strategies
Author :
Timothé Rossignol;Frédéric Richardeau;Marc Cousineau;Jean-Marc Blaquière;René Escoffier
Author_Institution :
Univeristy of Toulouse, LAPLACE, INP-ENSEEIHT, 2 rue Charles Camichel, BP 7122, 31071 cedex 7, France
Abstract :
In this paper, the authors present a behavioral model of a GaN normally ON HEMT. Forward and reverse conductions are modelized. The modelling of both conduction modes is required to provide accurate diode-less synchronous switching-cell simulation. A dedicated transistor capacitance extraction procedure based on an analysis of turn-on and turn-off waveforms is also proposed and experimented.
Keywords :
"HEMTs","Gallium nitride","Mathematical model","Logic gates","Transconductance","Parameter extraction"
Conference_Titel :
Power Electronics and Applications (EPE´15 ECCE-Europe), 2015 17th European Conference on
DOI :
10.1109/EPE.2015.7309208
