DocumentCode
3678832
Title
A feasibility study of using gate-emitter voltage method to estimate IGBT online junction temperature in practical applications
Author
G J Riedel;V K Sundaramoorthy;E Bianda;R Bloch;F Zurfluh
Author_Institution
ABB SWITZERLAND Ltd, Corporate Research Center, Segelhofstrasse 1K, 5405, Baden-Dä
fYear
2015
Firstpage
1
Lastpage
8
Abstract
The paper presents the feasibility of using gate-emitter voltage during IGBT turn-off in estimating the junction temperature of semiconductor chips in IGBT modules in real-time application. It is shown that the chosen parameter has negligible module and measurement circuit variation once calibrated and has been implemented successfully in a converter.
Keywords
"Temperature measurement","Current measurement","Voltage measurement","Insulated gate bipolar transistors","Junctions","Logic gates","Time measurement"
Publisher
ieee
Conference_Titel
Power Electronics and Applications (EPE´15 ECCE-Europe), 2015 17th European Conference on
Type
conf
DOI
10.1109/EPE.2015.7309214
Filename
7309214
Link To Document