• DocumentCode
    3678832
  • Title

    A feasibility study of using gate-emitter voltage method to estimate IGBT online junction temperature in practical applications

  • Author

    G J Riedel;V K Sundaramoorthy;E Bianda;R Bloch;F Zurfluh

  • Author_Institution
    ABB SWITZERLAND Ltd, Corporate Research Center, Segelhofstrasse 1K, 5405, Baden-Dä
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    8
  • Abstract
    The paper presents the feasibility of using gate-emitter voltage during IGBT turn-off in estimating the junction temperature of semiconductor chips in IGBT modules in real-time application. It is shown that the chosen parameter has negligible module and measurement circuit variation once calibrated and has been implemented successfully in a converter.
  • Keywords
    "Temperature measurement","Current measurement","Voltage measurement","Insulated gate bipolar transistors","Junctions","Logic gates","Time measurement"
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics and Applications (EPE´15 ECCE-Europe), 2015 17th European Conference on
  • Type

    conf

  • DOI
    10.1109/EPE.2015.7309214
  • Filename
    7309214