Title :
A new 3 level 4in1 T-type IGBT module with low internal inductance and optimized 6.1st/7th generation 1200V/650V chipset for UPS and PV inverter application
Author :
Marco Honsberg;Akiko Goto;Eric R. Motto
Author_Institution :
Mitsubishi Electric Europe B.V. 40880 Ratingen, Germany
Abstract :
Energy efficiency requirements of PV-inverter and UPS can be reached through multi-level IGBT topologies. A 3-level T-type topology utilizing dedicated 650V and 1200V IGBT and free-wheeling Diode chips (FwDi) and low inductance module construction are essential to create a performing IGBT module for these applications.
Keywords :
"Insulated gate bipolar transistors","Inductance","Topology","Switches","Uninterruptible power systems","Silicon","Commutation"
Conference_Titel :
Power Electronics and Applications (EPE´15 ECCE-Europe), 2015 17th European Conference on
DOI :
10.1109/EPE.2015.7309215
