DocumentCode :
3678886
Title :
Current-fed GaN front-end converter for ISOP-IPOS converter-based high power density dc distribution system
Author :
Yusuke Hayashi;Hiroshi Iso;Daisuke Hara;Akira Matsumoto
Author_Institution :
Osaka University, 2-1 Yamada-Oka, Suita, Japan
fYear :
2015
Firstpage :
1
Lastpage :
10
Abstract :
A current-fed ac-dc converter using Gallium Nitride (GaN) power devices has been proposed to realize high power density ISOP (Input Series and Output Parallel)-IPOS (Input Parallel and Output Series) converter-based dc distribution system. The current-fed converter becomes the strong candidate in the ISOP-IPOS converter-based dc distribution system because this system expands the possibility of the ac-dc converter design without taking the converter I/O voltages and its output power into account. An 1 kW prototype with the efficiency of 95.5% has been developed by using GaN-HEMTs to show the feasibility. Design consideration for the GaN converter has been also conducted quantitatively taking the low on-resistance, the high-speed switching behavior and its own device structure into account. The ISOP-IPOS converter-based dc distribution system takes full advantage of the current-fed converter and the converter using GaN devices contributes to realizing higher power density dc distribution system.
Keywords :
"Density measurement","Power system measurements","Gallium nitride","Switches","Topology","Next generation networking","Prototypes"
Publisher :
ieee
Conference_Titel :
Power Electronics and Applications (EPE´15 ECCE-Europe), 2015 17th European Conference on
Type :
conf
DOI :
10.1109/EPE.2015.7309269
Filename :
7309269
Link To Document :
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