DocumentCode :
3679060
Title :
Vce-based chip temperature estimation methods for high power IGBT modules during power cycling — A comparison
Author :
Anastasios Amoiridis;Anup Anurag;Pramod Ghimire;Stig Munk-Nielsen;Nick Baker
Author_Institution :
Aalborg University, Department of Energy Technology, 9220, Aalborg East, Denmark
fYear :
2015
Firstpage :
1
Lastpage :
9
Abstract :
Temperature estimation is of great importance for performance and reliability of IGBT power modules in converter operation as well as in active power cycling tests. It is common to be estimated through Thermo-Sensitive Electrical Parameters such as the forward voltage drop (Vce) of the chip. This experimental work evaluates the validity and accuracy of two Vce based methods applied on high power IGBT modules during power cycling tests. The first method estimates the chip temperature when low sense current is applied and the second method when normal load current is present. Finally, a correction factor that eliminates the series resistance contribution on the Vce measured at high current, is proposed.
Keywords :
"Temperature measurement","Insulated gate bipolar transistors","Semiconductor device measurement","Temperature sensors","Integrated circuits","Temperature","Current measurement"
Publisher :
ieee
Conference_Titel :
Power Electronics and Applications (EPE´15 ECCE-Europe), 2015 17th European Conference on
Type :
conf
DOI :
10.1109/EPE.2015.7309449
Filename :
7309449
Link To Document :
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