• DocumentCode
    3679066
  • Title

    Electrical performances and reliability of commercial SiC MOSFETs at high temperature and in SC conditions

  • Author

    Berthou Maxime;Ouaida Remy;Chailloux Thibault;Brosselard Pierre;Oge Sebastion;Tournier Dominique

  • Author_Institution
    Caly Technologies, 56 Bd Niels Bohr, Bat CEI2. 69603 Villeurbanne Cedex, 69100 Villeurbanne
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    9
  • Abstract
    Commercial Silicon Carbide have been characterized under various configuration to assess their maturity and capability to replace their Silicon counterparts in 1.2kV converter applications. Static and dynamic characterization were performed between 80 and 525K. Reliability of the devices have been tested at high temperatures. Finally critical and repetitve short-circuit capability have been measured.
  • Keywords
    "Temperature measurement","Logic gates","Temperature","MOSFET","Companies","Silicon carbide","Loss measurement"
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics and Applications (EPE´15 ECCE-Europe), 2015 17th European Conference on
  • Type

    conf

  • DOI
    10.1109/EPE.2015.7309455
  • Filename
    7309455
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3679066