DocumentCode
3679995
Title
A simple approach on junction temperature estimation for SiC MOSFET dynamic operation within safe operating area
Author
Yuan Zhang;Yung C. Liang
Author_Institution
Department of Electrical and Computer Engineering, National University of Singapore, Kent Ridge, Singapore 119 260
fYear
2015
Firstpage
5704
Lastpage
5707
Abstract
A simple approach of sensorless junction temperature estimation is proposed for SiC power MOSFET devices. The junction temperature is derived in real-time by finding the instantaneous on-state resistance which is temperature sensitive and can be used as an indicator for device thermal estimation. Based on the scheme, a high-speed circuit is designed to quickly detect the on-state resistance and estimate the corresponding internal temperature. This circuit is able to provide fast thermal estimation within microseconds without using any temperature sensors. The scheme is tested on the SiC power MOSFET C2M0080120D with the laboratory hardware measurement results verified.
Keywords
"Temperature measurement","Junctions","Silicon carbide","Temperature sensors","MOSFET","Resistance","Estimation"
Publisher
ieee
Conference_Titel
Energy Conversion Congress and Exposition (ECCE), 2015 IEEE
ISSN
2329-3721
Electronic_ISBN
2329-3748
Type
conf
DOI
10.1109/ECCE.2015.7310461
Filename
7310461
Link To Document