• DocumentCode
    3680127
  • Title

    Three-phase 4.16 kV medium voltage grid tied AC-DC converter based on 15 kV/40 a SiC IGBTs

  • Author

    Sachin Madhusoodhanan;Awneesh Tripathi;Krishna Mainali;Arun Kadavelugu;Dhaval Patel;Subhashish Bhattacharya;Kamalesh Hatua

  • Author_Institution
    FREEDM Systems Center, Department of ECE, North Carolina State University
  • fYear
    2015
  • Firstpage
    6675
  • Lastpage
    6682
  • Abstract
    Recently, with the emergence of Wide Bandgap semiconductor devices having higher blocking voltage capabilities and higher switching speed, ac-dc converters for Medium Voltage (MV) and Low Voltage (LV) dc micro-grid applications are becoming popular. In this paper, the first time experimental demonstration of such a 3-phase, isolated ac-dc power converter based on the newly developed 15 kV/40 A SiC IGBT is presented for 4.16 kV ac distribution grid interface. The presented converter consists of two bidirectional stages - the 4.16 kV ac to 8 kV dc front end converter followed by an 8 kV dc to 480 V dc dual active bridge converter with high frequency isolation. These stages are switched at 5 kHz and 10 kHz respectively. The converter design is presented along with experimental validation on a prototype at 9.6 kW.
  • Keywords
    "Insulated gate bipolar transistors","Silicon carbide","Logic gates","Switches","Capacitors","Voltage control","Capacitance"
  • Publisher
    ieee
  • Conference_Titel
    Energy Conversion Congress and Exposition (ECCE), 2015 IEEE
  • ISSN
    2329-3721
  • Electronic_ISBN
    2329-3748
  • Type

    conf

  • DOI
    10.1109/ECCE.2015.7310594
  • Filename
    7310594