DocumentCode
3680127
Title
Three-phase 4.16 kV medium voltage grid tied AC-DC converter based on 15 kV/40 a SiC IGBTs
Author
Sachin Madhusoodhanan;Awneesh Tripathi;Krishna Mainali;Arun Kadavelugu;Dhaval Patel;Subhashish Bhattacharya;Kamalesh Hatua
Author_Institution
FREEDM Systems Center, Department of ECE, North Carolina State University
fYear
2015
Firstpage
6675
Lastpage
6682
Abstract
Recently, with the emergence of Wide Bandgap semiconductor devices having higher blocking voltage capabilities and higher switching speed, ac-dc converters for Medium Voltage (MV) and Low Voltage (LV) dc micro-grid applications are becoming popular. In this paper, the first time experimental demonstration of such a 3-phase, isolated ac-dc power converter based on the newly developed 15 kV/40 A SiC IGBT is presented for 4.16 kV ac distribution grid interface. The presented converter consists of two bidirectional stages - the 4.16 kV ac to 8 kV dc front end converter followed by an 8 kV dc to 480 V dc dual active bridge converter with high frequency isolation. These stages are switched at 5 kHz and 10 kHz respectively. The converter design is presented along with experimental validation on a prototype at 9.6 kW.
Keywords
"Insulated gate bipolar transistors","Silicon carbide","Logic gates","Switches","Capacitors","Voltage control","Capacitance"
Publisher
ieee
Conference_Titel
Energy Conversion Congress and Exposition (ECCE), 2015 IEEE
ISSN
2329-3721
Electronic_ISBN
2329-3748
Type
conf
DOI
10.1109/ECCE.2015.7310594
Filename
7310594
Link To Document