An improved and low-resistive package for high-current MOSFET

Over the years improved silicon technologies for low-voltage power MOSFETs have led to a very low on-resistance of the die which is now comparable or even lower than that of the device package. Modern SMD packages offer a significant reduction of the package-related resistive contribution to the overall on-resistance but are limited in the maximum useable chip size due to their small form factor. Larger dies are usually mounted into through-hole-packages or their derivatives resulting in certain limitations of their performance. In this work a new package solution especially suited for high current applications linked to high reliability requirements such as industrial motor drives or servers is discussed from the user´s perspective.