DocumentCode :
3680871
Title :
Effects of current filaments during dynamic avalanche on the collector-emitter-voltage of high voltage Trench-IGBTs
Author :
G. De Falco;A. Würfel;L. Maresca;N. Kaminski;A. Irace;D. Silber
Author_Institution :
DEPARTMENT OF ELECTRICAL ENGINEERING AND INFORMATION, TECHNOLOGIES, UNIVERSITY FEDERICO II
fYear :
2015
Firstpage :
1
Lastpage :
9
Abstract :
In this work, we present a TCAD simulation based analysis on high voltage trench IGBTs during switching conditions sufficiently stressful to trigger the dynamic avalanche phenomenon. The analyses show the effect of current filamentation on the collector-emitter-voltage of the IGBT.
Keywords :
"Insulated gate bipolar transistors","Current density","Switches","Semiconductor process modeling","Integrated circuit modeling","Load modeling","Analytical models"
Publisher :
ieee
Conference_Titel :
Power Electronics and Applications (EPE´15 ECCE-Europe), 2015 17th European Conference on
Type :
conf
DOI :
10.1109/EPE.2015.7311724
Filename :
7311724
Link To Document :
بازگشت