• DocumentCode
    3680887
  • Title

    Recent advancements in IGCT technologies for high power electronics applications

  • Author

    Umamaheswara Vemulapati;Munaf Rahimo;Martin Arnold;Tobias Wikström;Jan Vobecky;Björn Backlund;Thomas Stiasny

  • Author_Institution
    ABB Switzerland Ltd., Corporate Research, Segelhofstrasse 1K, Baden-Dä
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    10
  • Abstract
    In this paper, we review the progress made recently for further developing the Integrated Gate Commutated Thyristor (IGCT) device concept for high power electronics applications. A wide range of newly introduced IGCT technologies are discussed and recent prototype experimental results as well as novel structures and future trends of the IGCT technology are presented. This will provide system designers with a comprehensive overview of the potentials possible with this device concept.
  • Keywords
    "Logic gates","Cathodes","Insulated gate bipolar transistors","Performance evaluation","Market research","Anodes","Switches"
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics and Applications (EPE´15 ECCE-Europe), 2015 17th European Conference on
  • Type

    conf

  • DOI
    10.1109/EPE.2015.7311740
  • Filename
    7311740
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3680887