DocumentCode :
3680899
Title :
Switching losses in a 1.7 kW GaN based full-bridge DC-DC converter with synchronous rectification
Author :
Rakesh Ramachandran;Morten Nymand
Author_Institution :
Maersk Mc-Kinney Moller Institute, University of Southern Denmark, 5230 Odense, Denmark
fYear :
2015
Firstpage :
1
Lastpage :
10
Abstract :
The paper presents the detailed analysis of switching losses in GaN devices for an isolated full-bridge dc-dc converter. Switching losses includes capacitive losses along with turn-on and turn-off losses of the power MOSFET. In hard switched converters, the output capacitance of MOSFET contributes to a significant part of the switching loss. The capacitive loss analysis also helps in determining the optimum number of devices used in parallel for a given power level and switching frequency. The analysis is performed on a 1.7 kW full bridge isolated dc-dc GaN converter at a switching frequency of 50 kHz. The paper also presents the GaN switch efficiency curve for an isolated dc-dc GaN converter with different number of devices in parallel.
Keywords :
"Gallium nitride","Switches","Switching loss","MOSFET","Capacitance","Logic gates","Silicon"
Publisher :
ieee
Conference_Titel :
Power Electronics and Applications (EPE´15 ECCE-Europe), 2015 17th European Conference on
Type :
conf
DOI :
10.1109/EPE.2015.7311754
Filename :
7311754
Link To Document :
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