Title :
Investigation of deep levels in SiC-Schottky diodes with frequency resolved admittance spectroscopy
Author :
Eric Pertermann;Josef Lutz;R. K. Sharma;P. Hazdra;S. Popelka;Hans Peter Felsl;Franz-Josef Niedernostheide;Hans-Joachim Schulze
Author_Institution :
Chair of Power Electronics and EMC, Technische Universitä
Abstract :
We show that the technique of Frequency Resolved Admittance Spectroscopy (FRAS) allows the identification of deep traps with reduced measurement effort compared to Deep Level Transient Spectroscopy (DLTS). This is shown by the analysis of radiation defects introduced in n-type 4H-SiC 1700V Schottky diodes.
Keywords :
"Temperature measurement","Frequency measurement","Semiconductor device measurement","Energy states","Schottky diodes","Admittance","Capacitance"
Conference_Titel :
Power Electronics and Applications (EPE´15 ECCE-Europe), 2015 17th European Conference on
DOI :
10.1109/EPE.2015.7311785
