Design Expressions for the Magnetically Insulated Line Oscillator

Author

Dwivedi, Shipra ; Jain, P.K.

Author_Institution

Dept. of Electron. Eng., IIT-BHU, Varanasi, India

Volume

41

Issue

5

fYear

2013

fDate

May-13

Firstpage

1549

Lastpage

1556

Abstract

In this paper, a simple compact magnetically insulated line oscillator (MILO) design methodology, simulation, and optimization are described the MILO device combines the technologies of magnetically insulted electron flow with the slow-wave structure, and the device operates at a wide range of voltage (0.1 MV ≤ V ≤ 1 MV). The authors present the design methodology for a load-limited MILO device of a desired oscillation frequency, radio-frequency (RF) power, and applied dc voltage. An S-band MILO is designed and simulated using commercial particle-in-cell code MAGIC, for 600-kV dc voltage and 35-kA beam current. The simulated value for RF power is found to be in agreement with the designed value within 5% and an average output power of 1.05 GW at designed 2.725-GHz frequency is obtained.

Keywords

UHF oscillators; slow wave structures; MILO design; S-band MILO; current 35 kA; frequency 2.725 GHz; magnetically insulated line oscillator design; magnetically insulted electron flow; particle-in-cell code MAGIC; power 1.05 GW; slow-wave structure; voltage 600 kV; Anodes; Cathodes; Oscillators; Periodic structures; Power generation; Radio frequency; Shape; High Power Microwave (HPM) source; magnetically insulate line oscillator; particle-in-cell (PIC) simulation; periodic structure; slow-wave structure;

fLanguage

English

Journal_Title

Plasma Science, IEEE Transactions on

Publisher

ieee

ISSN

0093-3813

Type

jour

DOI

10.1109/TPS.2013.2256470

Filename

6508892