Title :
Theoretical analyses and modeling for nanoelectronics
Author :
G. Baccarani;E. Baravelli;E. Gnani;A. Gnudi;S. Reggiani
Author_Institution :
ARCES-DEI, University of Bologna, Via Toffano 2 - 40125, Bologna, Italy
Abstract :
In this presentation we shortly discuss the evolution of Microelectronics into Nanoelectronics, according to the predictions of Moore´s law, and some of the issues related with this evolution. Next, we address the requirements of device modeling related with an extreme device miniaturization, such as the band splitting into multiple subbands and quasi-ballistic transport. Physical models are summarized and a few simulation results of heterojunction TFETs are reported and discussed.
Keywords :
"Inverters","Logic gates","Tunneling","CMOS integrated circuits","Leakage currents","Heterojunctions"
Conference_Titel :
European Solid-State Circuits Conference (ESSCIRC), ESSCIRC 2015 - 41st
Print_ISBN :
978-1-4673-7470-5
DOI :
10.1109/ESSCIRC.2015.7313815
