• DocumentCode
    3682334
  • Title

    A 4GHz, low latency TCAM in 14nm SOI FinFET technology using a high performance current sense amplifier for AC current surge reduction

  • Author

    Alexander Fritsch;Michael Kugel;Rolf Sautter;Dieter Wendel;Jürgen Pille;Otto Torreiter;Shankar Kalyanasundaram;Daniel A. Dobson

  • Author_Institution
    IBM Systems Group, Hardware Development Boeblingen, Germany
  • fYear
    2015
  • Firstpage
    343
  • Lastpage
    346
  • Abstract
    A 4GHz, low latency TCAM in 14nm SOI FinFET technology, using a matchline current sensing scheme with an energy consumption of 0.63 fJ/bit/search at 0.9V and a peak current reduction of 50% compared to voltage sensing implementations. A by entry adjustable search depth allows to reduce power consumption for variable size translation tables. The implemented sandwich floorplan enables an area efficient integration of high performance 0.286μm2 16T-TCAM and 0.143μm2 8T-SRAM cells.
  • Keywords
    "Sensors","Logic gates","Random access memory","Power demand","FinFETs","Hardware"
  • Publisher
    ieee
  • Conference_Titel
    European Solid-State Circuits Conference (ESSCIRC), ESSCIRC 2015 - 41st
  • ISSN
    1930-8833
  • Print_ISBN
    978-1-4673-7470-5
  • Type

    conf

  • DOI
    10.1109/ESSCIRC.2015.7313897
  • Filename
    7313897
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3682334