Title :
Filtering dirty data in DRAM to reduce PRAM writes
Author :
Hyunsun Park;Chanha Kim;Sungjoo Yoo;Chanik Park
Author_Institution :
Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), South Korea
Abstract :
Phase-change RAM (PRAM) is a promising candidate of emerging memory technologies which provides large capacity and low leakage power to compensate for the limitations of DRAM in the hybrid DRAM/PRAM memory subsystem. However, for practical applications of PRAM in the hybrid main memory, we need to reduce write traffics to PRAM in order to overcome the write-related limitations in PRAM such as write endurance. In our work, we propose a concept called in-DRAM write buffer for the hybrid main memory to reduce PRAM write traffics. The cache line-level dirty data are filtered out from the evicted DRAM row and stored in the write buffer which occupies a portion of DRAM by sacrificing the capacity of DRAM cache. In order to reduce PRAM writes, the write buffer tries to maximize write coalescing by avoiding the PRAM write-back of soon-to-be-accessed dirty data. In order to adapt to the dynamically changing program behavior in PRAM writes, we also propose a method to adjust the write buffer size dynamically during runtime. Experimental results show that the proposed dynamic method offers up to 91.92% reduction in PRAM writes and gives results (average 14.81% and 9.47% reduction in PRAM writes and program runtime, respectively) comparable to the best of static write buffer size cases.
Keywords :
"Phase change random access memory","Benchmark testing","Buffer storage","Runtime","Memory management","Encoding"
Conference_Titel :
Very Large Scale Integration (VLSI-SoC), 2015 IFIP/IEEE International Conference on
Electronic_ISBN :
2324-8440
DOI :
10.1109/VLSI-SoC.2015.7314437