Current Status of Gallium Oxide-Based Power Device Technology

Gallium oxide (Ga₂O₃) possesses excellent material properties especially for power device applications. It is also attractive from an industrial viewpoint since large-size, high-quality wafers can be manufactured by using simple methods. These two features have drawn much attention to Ga₂O₃ as a new wide bandgap semiconductor following SiC and GaN. In this report, we describe the recent progress in development on fundamental technologies for Ga₂O₃ devices, covering wafer production from melt-grown bulk single crystals, homoepitaxial thin-film growth by halide vapor phase epitaxy, as well as device processing and characterization of metal-oxide-semiconductor field-effect transistors and Schottky barrier diodes.