Title :
GaN MMIC for Ka-Band with 18W
Author :
K. Takagi;C. Y. Ng;H. Sakurai;K. Matstushita
Author_Institution :
Microwave Solid-State Eng. Dept., Toshiba Corp., Kawasaki, Japan
Abstract :
A Ka-band high power amplifier MMIC developed from a robust process of 0.2μm gate-length AlGaN/GaN HEMT on SiC is presented. The MMIC chip was measured across 29 to 31GHz under pulsed bias condition. At VDD=28V, The MMIC chip achieved a power added efficiency of 17% with an output power of 18W. The 2-stage amplifier GaN MMIC has 10.2dB linear gain and a die-size of 4.0mm × 5.5mm. The MMIC can realize high power Solid-State Power Amplifier.
Keywords :
"Logic gates","MMICs","Gallium nitride","Power amplifiers","Power generation","Field effect transistors","Gain"
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2015 IEEE
DOI :
10.1109/CSICS.2015.7314504
