• DocumentCode
    3682897
  • Title

    GaN MMIC for Ka-Band with 18W

  • Author

    K. Takagi;C. Y. Ng;H. Sakurai;K. Matstushita

  • Author_Institution
    Microwave Solid-State Eng. Dept., Toshiba Corp., Kawasaki, Japan
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A Ka-band high power amplifier MMIC developed from a robust process of 0.2μm gate-length AlGaN/GaN HEMT on SiC is presented. The MMIC chip was measured across 29 to 31GHz under pulsed bias condition. At VDD=28V, The MMIC chip achieved a power added efficiency of 17% with an output power of 18W. The 2-stage amplifier GaN MMIC has 10.2dB linear gain and a die-size of 4.0mm × 5.5mm. The MMIC can realize high power Solid-State Power Amplifier.
  • Keywords
    "Logic gates","MMICs","Gallium nitride","Power amplifiers","Power generation","Field effect transistors","Gain"
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductor Integrated Circuit Symposium (CSICS), 2015 IEEE
  • Type

    conf

  • DOI
    10.1109/CSICS.2015.7314504
  • Filename
    7314504
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3682897