Title : 
III-V MOSFETs for Future CMOS
         
        
            Author : 
J. A. del Alamo;D. A. Antoniadis;J. Lin;W. Lu;A. Vardi;X. Zhao
         
        
            Author_Institution : 
Microsyst. Technol. Labs., Massachusetts Inst. of Technol., Cambridge, MA, USA
         
        
        
        
        
            Abstract : 
In the last few years, as Si electronics faces mounting difficulties to maintain its historical scaling path, transistors based on III-V compound semiconductors have emerged as a credible alternative. To get to this point, fundamental technical problems had to be solved. Nevertheless, there are still many challenges that need to be addressed before the first non-Si CMOS technology becomes a reality. This paper reviews recent progress as well as challenges of III-V electronics for future logic applications.
         
        
            Keywords : 
"MOSFET","Indium gallium arsenide","Logic gates","Silicon","CMOS integrated circuits","Current density"
         
        
        
            Conference_Titel : 
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2015 IEEE
         
        
        
            DOI : 
10.1109/CSICS.2015.7314512