• DocumentCode
    3682905
  • Title

    III-V MOSFETs for Future CMOS

  • Author

    J. A. del Alamo;D. A. Antoniadis;J. Lin;W. Lu;A. Vardi;X. Zhao

  • Author_Institution
    Microsyst. Technol. Labs., Massachusetts Inst. of Technol., Cambridge, MA, USA
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In the last few years, as Si electronics faces mounting difficulties to maintain its historical scaling path, transistors based on III-V compound semiconductors have emerged as a credible alternative. To get to this point, fundamental technical problems had to be solved. Nevertheless, there are still many challenges that need to be addressed before the first non-Si CMOS technology becomes a reality. This paper reviews recent progress as well as challenges of III-V electronics for future logic applications.
  • Keywords
    "MOSFET","Indium gallium arsenide","Logic gates","Silicon","CMOS integrated circuits","Current density"
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductor Integrated Circuit Symposium (CSICS), 2015 IEEE
  • Type

    conf

  • DOI
    10.1109/CSICS.2015.7314512
  • Filename
    7314512