Lumped-Element Modeling of Millimeter-Wave HEMT Parasitics via Full-Wave Electromagnetic Analysis

We present a broadband lumped-element parasitic equivalent circuit extraction procedure based on full-wave modeling of electromagnetic interactions within the pad layout of millimeter-wave (mmW) high electron mobility transistors (HEMTs). The proposed method is illustrated using a conventional two-finger HEMT topology within a coplanar waveguide environment. The accuracy of the suggested extraction procedure is validated through extensive comparisons between full-wave electromagnetic simulations, measured data, and the computed response of the proposed model up to 325 GHz. Using the proposed approach, we are also illustrating the impact of the gate-to-drain mutual inductance introduced in the conventional small signal equivalent circuit. Subsequently, we apply our new approach to differential configurations.