VO2 Switches for Millimeter and Submillimeter-Wave Applications

Several vanadium dioxide based single-pole single-throw (SPST) series switch geometries have been fabricated and demonstrate unequalled broadband low loss and isolation from DC to 280 GHz. A switch geometry having insertion loss of only 1.3 dB at 220 GHz and isolation of 15.7 dB also shows excellent S-parameter uniformity across the wafer. This uniformity indicates the maturity of the VO2 switch fabrication process. Furthermore, we have developed a model and comprehensive set of modeling parameters that will guide our future device development efforts. This model predicts that a millimeter-wave SPST switch having insertion loss <; 1 dB and isolation > 12 at 220 GHz can be fabricated utilizing our existing device process. Such a switch will be vital for enabling applications such as electronically scanned phased arrays at millimeter-wave and terahertz frequencies.