DocumentCode :
3682921
Title :
VO2 Switches for Millimeter and Submillimeter-Wave Applications
Author :
C. Hillman;P. A. Stupar;Z. Griffith
Author_Institution :
Teledyne Sci. Co., Thousand Oaks, CA, USA
fYear :
2015
Firstpage :
1
Lastpage :
4
Abstract :
Several vanadium dioxide based single-pole single-throw (SPST) series switch geometries have been fabricated and demonstrate unequalled broadband low loss and isolation from DC to 280 GHz. A switch geometry having insertion loss of only 1.3 dB at 220 GHz and isolation of 15.7 dB also shows excellent S-parameter uniformity across the wafer. This uniformity indicates the maturity of the VO2 switch fabrication process. Furthermore, we have developed a model and comprehensive set of modeling parameters that will guide our future device development efforts. This model predicts that a millimeter-wave SPST switch having insertion loss <; 1 dB and isolation > 12 at 220 GHz can be fabricated utilizing our existing device process. Such a switch will be vital for enabling applications such as electronically scanned phased arrays at millimeter-wave and terahertz frequencies.
Keywords :
"Heating","Radio frequency","Contacts","Insertion loss","Capacitance","Geometry","Scattering parameters"
Publisher :
ieee
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2015 IEEE
Type :
conf
DOI :
10.1109/CSICS.2015.7314528
Filename :
7314528
Link To Document :
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