Title :
Design and optimization on ESD self-protection schemes for 700V LDMOS in high voltage power IC
Author :
Zhong Chen;Akram Salman;Guru Mathur;Gianluca Boselli
Author_Institution :
University of Arkansas, Electrical Engineering, Fayetteville, 72701, USA
Abstract :
This paper presents an ESD self-protection scheme for a 700V high-voltage laterally diffused metal-oxide-semiconductor (LDMOS) field effect transistor. The safe operating area (SOA) and breakdown failure mechanism of 700V LDMOS are analyzed using simulations and experimental results. The scalability of thermal failure current with LDMOS width is also demonstrated.
Keywords :
"Logic gates","Electrostatic discharges","Transient analysis","Immune system","Electric potential","Robustness"
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2015 37th
DOI :
10.1109/EOSESD.2015.7314735
