Title :
Source of miscorrelation of product level HBM to TLP test results
Author :
Manjunatha Prabhu; Jian-Hsing Lee;Mahadeva Iyer Natarajan;Vasantha Kumar;Ruchil Jain; Tsung-Che Tsai; Li Zhiqing;Dominic Thurmer
Author_Institution :
GLOBALFOUNDRIES Inc, 400 Stone Break Road Ext., MALTA NY 12020 USA
Abstract :
Correlation between TLP and HBM test results at product level and/or complex ESD circuit is not feasible. In product level HBM testing there can be stress condition which is worse at low current compared to high ESD current. Such results cannot be replicated in TLP.
Keywords :
"Stress","Electrostatic discharges","Discharges (electric)","MOSFET","Current distribution","Current density"
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2015 37th
DOI :
10.1109/EOSESD.2015.7314743
