DocumentCode
3683107
Title
Source of miscorrelation of product level HBM to TLP test results
Author
Manjunatha Prabhu; Jian-Hsing Lee;Mahadeva Iyer Natarajan;Vasantha Kumar;Ruchil Jain; Tsung-Che Tsai; Li Zhiqing;Dominic Thurmer
Author_Institution
GLOBALFOUNDRIES Inc, 400 Stone Break Road Ext., MALTA NY 12020 USA
fYear
2015
Firstpage
1
Lastpage
7
Abstract
Correlation between TLP and HBM test results at product level and/or complex ESD circuit is not feasible. In product level HBM testing there can be stress condition which is worse at low current compared to high ESD current. Such results cannot be replicated in TLP.
Keywords
"Stress","Electrostatic discharges","Discharges (electric)","MOSFET","Current distribution","Current density"
Publisher
ieee
Conference_Titel
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2015 37th
Type
conf
DOI
10.1109/EOSESD.2015.7314743
Filename
7314743
Link To Document