• DocumentCode
    3683110
  • Title

    ESD characterization of diodes and ggMOS in Germanium FinFET technologies

  • Author

    Roman Boschke;Dimitri Linten;Geert Hellings; Shih-Hung Chen;Mirko Scholz;Jerome Mitard;Liesbeth Witters;Nadine Collaert;Aaron Thean;Guido Groeseneken

  • Author_Institution
    imec, Leuven, Belgium
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    9
  • Abstract
    Germanium as a high mobility material is a candidate to replace Silicon as channel material for future scaled FinFETs. This work presents the ESD robustness of gated diodes and ggMOS in Ge FinFETs. Relaxed Germanium ggPMOS shows 3 x higher failure current compared to Strained Ge on SiGe, because of low thermal conductivities of SiGe layer underneath sGe.
  • Keywords
    "Logic gates","FinFETs","Silicon","Resistance","Electrostatic discharges","Silicon germanium"
  • Publisher
    ieee
  • Conference_Titel
    Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2015 37th
  • Type

    conf

  • DOI
    10.1109/EOSESD.2015.7314746
  • Filename
    7314746
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3683110