• DocumentCode
    3683114
  • Title

    An electrostatic-discharge-protection solution for Silicon-Carbide MESFET

  • Author

    T. Phulpin;D. Trémouilles;K. Isoird;D Tournier;P. Godignon;P. Austin

  • Author_Institution
    CNRS, LAAS, 7 avenue du colonel Roche, F-31400 Toulouse, France
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    7
  • Abstract
    Among wide band gap material for power electronic, Silicon Carbide (SiC) is the most advanced and starts to gain market shares. We have studied planar SiC MESFET ESD robustness. To solve the problem of their low intrinsic ESD robustness, we demonstrate in this work an effective protection solution and possible improvements.
  • Keywords
    "MESFETs","Electrostatic discharges","Silicon carbide","Electrodes","Robustness","Schottky diodes","Metals"
  • Publisher
    ieee
  • Conference_Titel
    Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2015 37th
  • Type

    conf

  • DOI
    10.1109/EOSESD.2015.7314750
  • Filename
    7314750
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3683114